Studies of the Temperature-Driven Flow Lines and Phase Transitions in a Two-Dimensional Si/SiGe Hole System
نویسندگان
چکیده
We have performed low-temperature transport experiments on a Si/SiGe hole system. The measured transverse and longitudinal conductivities σxx and σxy allows us to study the magnetic-field-induced transitions in the system. In particular, we present the first study of temperature-driven flow lines in the ”anomalous Hall insulator” regime near a Landau level filling factor ν = 1.5. The ”anomalous” temperaturedriven flow lines could be due to the unusual energy level scheme in a Si/SiGe hole system. Moreover, for 3 < ν < 5, there is a temperature-independent point in ρxx(B), ρxy(B), σxx(B), and σxy(B) which corresponds to a boundary of the quantum phase transition. PACS 73.40.-c-Electronic transport in interface structures PACS 73.43.-f-Quantum Hall effects PACS 73.43.Nq-Quantum phase transitions
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